An Mn3Sn homo-junction enables efficient field-free full switching of chiral antiferromagnets with greatly reduced power consumption, advancing their potential for energy-efficient magnetic memory devices with advantages of ultradense integration and ultrafast speed.
Нина Ташевская (Редактор отдела «Среда обитания»)，详情可参考旺商聊官方下载
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Дарья Устьянцева (редактор отдела «Мир»)
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